卢太平

时间:2021年08月15日

卢太平

教育经历

2011.09-2014.07,博士中国科学院物理研究所

2008.09-2011.07,硕士华南师范大学光电子材料与技术研究所

2004.09-2008.07,学士长春理工大学材料科学与工程学院

工作经历

2023.01-至今,副教授鲁东大学集成电路学院

2021.01-2022.12,讲师鲁东大学集成电路学院

2016.10-2018.10,博士后瑞典隆德大学固体物理系

2014.07-2020.12,讲师太原理工大学新材料界面科学与工程教育部重点实验室

研究领域

Ga(Al,In)N,Ga2O3等半导体材料外延生长

宽禁带半导体材料物性研究

宽禁带半导体光电子及电子器件

半导体低维电子材料

承担研究课题

[1] 2016.01-2018.12,InGaN基量子点/量子阱复合结构的外延生长及光学性质的研究,主持,国家自然科学基金,Grant No.61504090

[2] 2023.01-2025.12,量子调控InGaN基低维复合系统载流子动力学性质的研究,主持,山东省自然科学基金,GrantNo.ZR2022MA045

发表文章

[1] Yanning Zheng, Jingxia Zheng, Junli Wang, Yongzhen Yang, Taiping Lu*, Xuguang Liu. Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission. Nanomaterials, Vol.10, No.2, pp.303, 2020

[2] Xiaorun Zhou, Taiping Lu*, Yadan Zhu, et al. Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier. Nanoscale Research Letters, Vol.12, pp.354, 2017

[3] Liu Qing-Ming, Lu Tai-Ping*, Zhu Ya-Dan, et al. Effect of medium-high temperature interlayer thickness on the optical and electrical properties of blue light emitting diodes. Chinese Journal of Luminescence (in Chinese), Vol.37, No.7, pp.829, 2016

[4] Taiping Lu, Ziguang Ma, Chunhua Du, et al. Temperature-dependent photoluminescence in light-emitting diodes. Scientific Reports, Vol.4, pp.6131, 2014

[5] Taiping Lu, Ziguang Ma, Chunhua Du, et al. Effect of stair-case electron blocking layer on the performance of blue InGaN based LEDs. Journal of Display Technology, Vol.10, No.2, pp.146, 2014

[6] Taiping Lu, Ziguang Ma, Chunhua Du, et al. Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer. Applied physics A, Vol.114, No.4, pp.1055, 2014

[7] Taiping Lu, Shuti Li, Chao Liu, et al. Advantages of GaN based light-emitting diodes with a p InGaN hole reservoir layer. Applied Physics Letters, Vol.100, No.14, pp.141106, 2012

[8] Taiping Lu, Shuti Li, Kang Zhang, et al. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes. Optics Express, Vol.19, No.19, pp.18319, 2011

[9] Lu Tai-Ping, Li Shu-Ti, Zhang Kang, et al. The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer. Chinese Physics B, Vol.20, No.09, pp.098503, 2011

[10] Lu Tai-Ping, Li Shu-Ti, Zhang Kang, et al. Blue InGaN light-emitting diodes with dip-shaped quantum wells. Chinese Physics B, Vol.20, No.10, pp.108504, 2011

授权发明专利

[1]卢太平,朱亚丹,周小润,许并社,一种DUV LED外延片结构,2018.04.13,中国,ZL201610466965.9

[2]卢太平,朱亚丹,许并社,一种GaN基绿光LED外延结构及其制备方法,2018.10.26,中国,ZL 201610324298.0

[3]卢太平,朱亚丹,许并社,周小润,一种提高GaN基LED内量子效率的外延生长方法,2019.01.25,中国,ZL201710140872.1

[4]卢太平,郑延宁,朱亚丹,周小润,许并社,一种InGaN薄膜的制备方法,2020.02.14,中国,ZL201810024739.4

山东高校先进半导体探测器国际联合实验室
  • 电话:0535-6682125

  • 地址:山东省烟台市芝罘区红旗中路186号

  • 邮箱:jcdl2021@126.com(意见反馈)

学校微信

鲁东大学集成电路学院 版权所有  鲁ICP备号:09096634号

鲁公网安备号 37060202000109号