卢太平

卢太平副教授

Email：taipinglu@126.com

教育经历：

2011.09-2014.07：中国科学院物理研究所凝聚态物理专业学习，获理学博士学位

2008.09-2011.07：华南师范大学材料物理与化学专业学习，获工学硕士学位

2004.09-2008.07：长春理工大学无机非金属材料工程专业学习，获工学学士学位

工作经历：

2021.08至今：鲁东大学集成电路学院，讲师

2021.01-2021.08：鲁东大学物理与光电工程学院，讲师

2016.10-2018.10：瑞典隆德大学固体物理专业，博士后

2014.07-2020.12：太原理工大学新材料界面科学与工程教育部重点实验室，讲师

研究领域：

Ga(Al,In)N，Ga₂O₃等半导体材料外延生长

宽禁带半导体材料物性研究

宽禁带半导体光电子及电子器件

半导体低维电子材料

承担研究课题：

[1] InGaN基量子点/量子阱复合结构的外延生长及光学性质的研究（61504090），2016.01-2018.12，国家自然科学基金，主持

[2]量子调控InGaN基低维复合系统载流子动力学性质的研究（ZR2022MA045），2023.01-2025.12，山东省自然科学基金，主持

研究生培养：

招收半导体与集成电路方向研究生

学术论文：

[1] Yanning Zheng, Jingxia Zheng, Junli Wang, Yongzhen Yang, Taiping Lu^＊, Xuguang Liu, Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission,Nanomaterials, Vol.10, No.2, pp.303, 2020

[2] Xiaorun Zhou, Taiping Lu^＊, Yadan Zhu et al., Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N₂/H₂-Grown GaN Barrier, Nanoscale Research Letters, Vol.12, pp.354, 2017

[3] Liu Qing-Ming, Lu Tai-Ping^＊, Zhu Ya-Dan et al., Effect of medium-high temperature interlayer thickness on the optical and electrical properties of blue light emitting diodes, Chinese Journal of Luminescence (in Chinese), Vol.37, No.7, pp.829, 2016

[4] Taiping Lu, Ziguang Ma, Chunhua Du et al., Temperature-dependent photoluminescence in light-emitting diodes, Scientific Reports, Vol.4, pp.6131, 2014

[5] Taiping Lu, Ziguang Ma, Chunhua Du et al., Effect of stair-case electron blocking layer on the performance of blue InGaN based LEDs, Journal of Display Technology, Vol.10, No.2, pp.146, 2014

[6] Taiping Lu, Ziguang Ma, Chunhua Du et al., Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer, Applied physics A, Vol.114, No.4, pp.1055, 2014

[7] Taiping Lu, Shuti Li, Chao Liu et al., Advantages of GaN based light-emitting diodes with a p InGaN hole reservoir layer, Applied Physics Letters, Vol.100, No.14, pp.141106, 2012

[8] Taiping Lu, Shuti Li, Kang Zhang et al., Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes, Optics Express, Vol.19, No.19, pp.18319, 2011

[9] Lu Tai-Ping, Li Shu-Ti, Zhang Kang et al., The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer, Chinese Physics B, Vol.20, No.09, pp.098503, 2011

[10] Lu Tai-Ping, Li Shu-Ti, Zhang Kang et al., Blue InGaN light-emitting diodes with dip-shaped quantum wells, Chinese Physics B, Vol.20, No.10, pp.108504, 2011

授权发明专利：

[1]卢太平，朱亚丹，周小润，许并社，一种DUV LED外延片结构，ZL201610466965.9

[2]卢太平，朱亚丹，许并社，一种GaN基绿光LED外延结构及其制备方法，ZL 201610324298.0

[3]卢太平，朱亚丹，许并社，周小润，一种提高GaN基LED内量子效率的外延生长方法，ZL201710140872.1

[4]卢太平，郑延宁，朱亚丹，周小润，许并社，一种InGaN薄膜的制备方法，ZL201810024739.4